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TC1301
REV.2_04/12/2004
Low Noise and Medium Power GaAs FETs
FEATURES * * * * * * * Low Noise Figure: NF = 0.8 dB Typical at 12 GHz High Associated Gain: Ga = 10 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GHz Breakdown Voltage: BVDGO 9 V Lg = 0.25 m, Wg = 600 m All-Gold Metallization for High Reliability 100 % DC Tested DESCRIPTION The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 C)
Symbol NF Ga P1dB GL IDSS gm VP BVDGO Rth CONDITIONS Noise Figure at VDS = 4 V, IDS = 50 mA, f = 12GHz Associated Gain at VDS = 4 V, IDS = 50 mA, f = 12GHz Output Power at 1dB Gain Compression Point , f = 12GHz VDS = 6 V, IDS = 80 mA Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 80 mA Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 1.2 mA Drain-Gate Breakdown Voltage at IDGO =0.3 mA Thermal Resistance
MIN 9 TYP 0.8 10 24 10 11 180 200 -1.0* 12 22 MAX 1.0 UNIT dB dB dBm dB mA mS Volts Volts C/W
PHOTO ENLARGEMENT
9
* For the tight control of the pinch-off voltage range, we divide TC1301 into 3 model numbers to fit customer design requirement (1)TC1301P0710 : Vp = -0.7V to -1.0V (2)TC1301P0811 : Vp = -0.8V to -1.1V (3)TC1301P0912 : Vp = -0.9V to -1.2V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/6
TC1301
ABSOLUTE MAXIMUM RATINGS (TA=25 C)
Symbol VDS VGS IDS IGS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Gate Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 7.0 V -3.0 V IDSS
REV.2_04/12/2004
TYPICAL NOISE PARAMETERS (TA=25 C)
VDS = 4 V, IDS = 50 mA Frequency NFopt 2 4 6 8 10 12 14 16 18 0.36 0.48 0.59 0.70 0.78 0.85 0.98 1.12 1.27 GA 19.7 16.6 14.3 12.7 11.7 10.9 10.4 9.8 9.0 opt MAG 0.88 0.74 0.62 0.55 0.50 0.49 0.50 0.51 0.54 Rn/50 ANG 15 39 64 92 120 148 174 -162 -141 0.28 0.18 0.15 0.12 0.09 0.06 0.04 0.04 0.07
600 A 20 dBm 800 mW 175 C - 65 C to +175 C
CHIP DIMENSIONS
760 12
D
D
D
290 12
S G S G S G S
Units: Micrometers Chip Thickness: 100
Gate Pad: 75 x 70 Drain Pad: 80 x 70 Source Pad: 75 x 80
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/6
TC1301
REV.2_04/12/2004
TYPICAL SCATTERING PARAMETERS (TA=25 C)
VDS = 4 V, IDS = 50 mA
1.0
6 0.
2. 0
60
Swp Max 18GHz
0 3. 0 4. 0 5.
10.0
0.8
Mag Max 0.1
5 13
Swp Max 18 GHz
45
90
S11
75
105
0 12
0.2
0.4
0.6
0.8 1.0
2.0
3.0 4.0 5.0
0
.0 -2
-0 .6
-1 35
.4 -0
-0.8
-1.0
Swp Min 2GHz
-1 20
-105
1.0
6 0.
0.8
60
Mag Max 10
5 13
90
75
2. 0
45
15 0
165
30
0.2
15
0
-180
-165
S21
-3 0
5 -4
50 -1
-1 35
-1 20
-105
-0.8
-1.0
2 Per Div
Swp Min 2 GHz
-0 .6
.0 -2
.4 -0
FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 MAG 0.8504 0.7843 0.7445 0.7206 0.7058 0.6961 0.6897 0.6853 0.6822 0.6800 0.6785 0.6776 0.6769 0.6766 0.6765 0.6766 0.6768 ANG -80.07 -103.76 -120.17 -132.00 -140.93 -147.93 -153.62 -158.39 -162.46 -166.03 -169.21 -172.07 -174.69 -177.11 -179.36 178.52 176.52 MAG 9.9111 7.8038 6.3123 5.2595 4.4944 3.9201 3.4764 3.1248 2.8405 2.6065 2.4110 2.2456 2.1042 1.9821 1.8759 1.7827 1.7005
S21 ANG 129.43 115.14 105.04 97.31 91.01 85.60 80.80 76.43 72.38 68.56 64.93 61.46 58.11 54.87 51.72 48.65 45.65 MAG 0.0557 0.0659 0.0713 0.0745 0.0767 0.0785 0.0800 0.0814 0.0828 0.0843 0.0858 0.0875 0.0892 0.0910 0.0928 0.0948 0.0969
S12 ANG 48.67 38.99 33.48 30.31 28.54 27.63 27.27 27.29 27.56 28.01 28.56 29.19 29.86 30.55 31.23 31.89 32.53 MAG 0.3868 0.3487 0.3277 0.3178 0.3147 0.3159 0.3198 0.3256 0.3327 0.3406 0.3490 0.3577 0.3667 0.3756 0.3845 0.3933 0.4020
* The data does not include gate, drain and source bond wires.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/6
-3 .0 -4 . -5. 0 0
2 -0.
Swp Min 2GHz
-10.0
-15
10.0
0.2
0.4
0.6
0.8 1.0
2.0
3.0 4.0 5.0
0
0. 4
-3 .0 -4 . -5. 0 0
2 -0.
Swp Max 18 GHz
-10.0
0. 4
15 0
165
30
15
0
0.2
105
10.0
-180
-15 -165
S12
5 -4
50 -1 0 -6
-3 0
-75
0.01 Per Div
Swp Min 2 GHz
-90
Swp Max 18GHz
0 3. 0 4. 0 5.
0 12
S22
10.0
0 -6
-75
-90
S22 ANG -68.29 -88.15 -101.61 -111.02 -117.84 -122.98 -127.02 -130.30 -133.08 -135.50 -137.67 -139.65 -141.49 -143.23 -144.89 -146.47 -148.00
TC1301
TYPICAL SCATTERING PARAMETERS (TA=25 C)
VDS = 6 V, IDS = 80 mA
REV.2_04/12/2004
1.0
6 0.
2. 0
60
Swp Max 18GHz
0 3. 0 4. 0 5.
10.0
Mag Max 0.09
5 13
Swp Max 18 GHz
45
0.8
90
S11
75
105
0 12
0.2
0.4
0.6
0.8 1.0
2.0
3.0 4.0 5.0
0
-0 .6
.0 -2
-1 35
.4 -0
-0.8
-1 20
-1.0
Swp Min 2GHz
-105
6 0.
60
45
2. 0
Mag Max 15
5 13
Swp Max 18 GHz
0. 4
1.0
90
0.8
75
15 0
165
15
0 -180
50 -1
5 -4 -1 35
-3 0
-1 20
-0 .6
-105
-0.8
-1.0
.0 -2
.4 -0
5 Per Div
Swp Min 2 GHz
FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
S11 MAG 0.8511 0.7902 0.7549 0.7342 0.7214 0.7133 0.7078 0.7041 0.7015 0.6998 0.6986 0.6978 0.6973 0.6971 0.6971 0.6973 0.6976 ANG -83.76 -107.47 -123.54 -134.97 -143.52 -150.20 -155.61 -160.12 -163.98 -167.36 -170.36 -173.08 -175.55 -177.85 -179.98 178.01 176.11
S21 MAG 10.1160 7.8891 6.3492 5.2766 4.5034 3.9260 3.4814 3.1301 2.8465 2.6134 2.4188 2.2542 2.1134 1.9919 1.8860 1.7930 1.7109
ANG 128.27 114.27 104.51 97.09 91.05 85.88 81.28 77.07 73.16 69.46 65.92 62.52 59.23 56.03 52.90 49.83 46.82
S12 MAG 0.0446 0.0523 0.0564 0.0590 0.0609 0.0626 0.0641 0.0655 0.0671 0.0686 0.0703 0.0720 0.0738 0.0756 0.0775 0.0795 0.0816
ANG 48.15 39.06 34.17 31.58 30.31 29.84 29.86 30.19 30.73 31.38 32.10 32.85 33.60 34.33 35.03 35.70 36.32
* The data does not include gate, drain and source bond wires.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P4/6
-3 .0 -4 . -5. 0 0
-165
S21
2 -0.
Swp Min 2GHz
MAG 0.3787 0.3349 0.3133 0.3059 0.3072 0.3138 0.3237 0.3356 0.3485 0.3620 0.3757 0.3893 0.4027 0.4157 0.4283 0.4404 0.4520
-10.0
-15
10.0
0.2
0.4
0.6
0.8 1.0
2.0
3.0 4.0 5.0
0
0.2
-3 .0 -4 . -5. 0 0
2 -0.
30
-10.0
0. 4
15 0
165
30
15
0
0.2
105
10.0
-180
-15 -165
S12
5 -4
50 -1 0 -6
-3 0
-75
0.03 Per Div
Swp Min 2 GHz
-90
Swp Max 18GHz
0 3. 0 4. 0 5.
0 12
S22
10.0
0 -6
-75
-90
S22 ANG -56.54 -72.15 -82.94 -90.91 -97.18 -102.35 -106.81 -110.76 -114.34 -117.64 -120.71 -123.59 -126.31 -128.89 -131.35 -133.69 -135.92
TC1301
REV.2_04/12/2004
SMALL SIGNAL MODEL, VDS = 4 V, IDS = 50 mA
SCHEMATIC
PARAMETERS
Parameters Parameters
0.057 nH 0.959 pF 0.074 pF 284.0 mS 5.54 psec Rs 1.66 Ohm 0.019 nH 0.167 pF 93.2 Ohm 1.358 Ohm 0.038 nH 2.08 Ohm Ls Cds 5.78 Ohm Rds Rd Ld
Cgd Gm Cds T Rds Rd Ld
Lg
Rg Cgs Ri
Lg Rg Cgs Ri Cgd
Rs Ls
Gm T
SMALL SIGNAL MODEL, VDS = 6 V, IDS = 80 mA
SCHEMATIC
PARAMETERS
Parameters Parameters
0.056 nH 1.33 pF 0.052 pF 315 mS 5.63 psec Rs 1.808 Ohm 0.016 nH 0.185 pF 90.1 Ohm 1.422 Ohm 0.036 nH 1.954 Ohm Ls Cds 5.58 Ohm Rds Rd Ld
Cgd Gm Cds T Rds Rd Ld
Lg
Rg Cgs Ri
Lg Rg Cgs Ri Cgd
Rs Ls
Gm T
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P5/6
TC1301
LARGE SIGNAL MODEL, VDS = 6 V, IDS =80 mA SCHEMATIC TOM2 MODEL PARAMETERS
Parameters VTO ALPHA BETA GAMMA
Lg Rg Cgs Id Ris Cds Cbs Rs Cgd Rid Rdb Rd Ld
REV.2_04/12/2004
Parameters -0.43283 V 9.54 0.49 0.0416 0.3091 0.84 0.1 0.01 5.558 ps 2.0833 Ohm 1.358 Ohm 1.662 Ohm 1E-11 mA 1 1V 0.2 V VMAX CGD CGS CDS RIS RID VBR RDB CBS TNOM LS LG LD AFAC NFING 0.5 V 0.0554 pF 6.018 pF 0.1599 pF 5.755 Ohm 0.001 Ohm 9V 94.333 Ohm 0.0463 pF 25 C 0.01893 nH 0.0576 nH 0.038 nH 1 1
DELTA Q NG ND TAU RG RD RS IS N VBI VDELTA
Ls
CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290C 5C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220C to 250C; Bond Tip Temperature: 150C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P6/6

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